Product Summary
The IRF644PBF is a Power MOSFET from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF644PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF644PBF absolute maximum ratings: (1)Drain-Source Voltage VDS: 250V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current VGS at 10 V ID TC = 25 ℃: 14A; TC = 100 ℃: 8.5 A; (4)Pulsed Drain Currenta IDM: 56A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energyb EAS: 550 mJ; (7)Repetitive Avalanche Currenta IAR: 14 A; (8)Repetitive Avalanche Energya EAR: 13 mJ; (9)Maximum Power Dissipation TC = 25 ℃ PD: 125 W; (10)Peak Diode Recovery dV/dtc dV/dt: 4.8 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 ℃; (12)Soldering Recommendations (Peak Temperature) for 10 s 300 ℃.
Features
IRF644PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF644PBF |
Vishay/Siliconix |
MOSFET N-Chan 250V 14 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF610 |
Vishay/Siliconix |
MOSFET N-Chan 200V 3.3 Amp |
Data Sheet |
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IRF610, SiHF610 |
Other |
Data Sheet |
Negotiable |
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IRF610_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF6100 |
MOSFET P-CH 20V 5.1A FLIP-FET |
Data Sheet |
Negotiable |
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IRF6100PBF |
MOSFET P-CH 20V 5.1A FLIPFET |
Data Sheet |
Negotiable |
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IRF610A |
Other |
Data Sheet |
Negotiable |
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