(China (Mainland))
Product Summary
The IS61LV6416-10TLI is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-performance, secondary cache for the Pentium, 680X0, and PowerPC microprocessors. The IS61LV6416-10TLI is organized as 65,536 words by 32 bits, fabricated with ICSI advanced CMOS technology. The IS61LV6416-10TLI integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.
Parametrics
IS61LV6416-10TLI absolute maximum ratings: (1)TSTG Storage Temperature: –65 to +150 ℃; (2)PD Power Dissipation: 1.5 W; (3)IOUT Output Current (per I/O): 20 mA; (4)VIN, VOUT Voltage Relative to GND for I/O Pins: –0.5 to VCCQ + 0.5 V.
Features
IS61LV6416-10TLI features: (1)High speed access time: 8, 10 12, and 15ns; (2)CMOS low power operation; (3)TTL compatible interface levels; (4)Single 3.3V power supply; (5)Fully static operation: no clock or refresh required; (6)Three state outputs; (7)Data control for upper and lower bytes; (8)Industrial temperature available.
Diagrams
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 IS61LV6416-10TLI |
ISSI |
SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v |
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IS61LV6416-10TLI-TR |
ISSI |
SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v |
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