(China (Mainland))
Product Summary
The D882 is a Si NPN transistor.
Parametrics
D882 absolute maximum ratings: (1)Collector-Base Voltage BVCBO: 40 V; (2)Collector-Emitter Voltage BVCEO: 30 V; (3)Emitter-Base Voltage BVEBO: 5 V; (4)Collector Dissipation PCM 10 W at Tcase=25℃; 1W at Tamb=25℃; (5)Collector Current DC ICM: 3 A Pulse Icp: 7 A; (6)Base Current IB: 0.6 A; (7)Junction Temperature Tj: +150℃; (8)Storage Temperature Tstg: -55 to +150℃.
Features
D882 features: (1)Collector-Emitter voltage: BVCBO= 40V; (2)Collector current up to 3A; (3)High hFE linearity.
Diagrams
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Pricing (USD) |
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 D882 |
Other |
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Data Sheet |
Negotiable |
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D882SS |
Other |
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Data Sheet |
Negotiable |
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