2SK2611

field effect transistor, TO-3P, 900 V, 100 μA, 150 W, 663 mJ, 1.1 Ω, Low leakage current

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Price:: US $0.10~1.00 / piece [Get Latest Price]

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	US $0.10~1.00

PartNumber:: 2SK2611

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-12-27

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Part Number:2SK2611
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Product Summary

The 2SK2611 is a TOSHIBA field effect transistor.

Parametrics

2SK2611 absolute maximum ratings: (1)Drain-source voltage VDSS: 900 V ; (2)Drain-gate voltage (RGS = 20 kΩ) VDGR: 900 V ; (3)Gate-source voltage VGSS: ±30 V ; (4)Drain current DC ID: 9 A ; (5)Pulse IDP: 27 A ; (6)Drain power dissipation (Tc = 25℃) PD: 150 W ; (7)Single pulse avalanche energy EAS: 663 mJ ; (8)Avalanche current IAR: 9 A ; (9)Repetitive avalanche energy EAR: 15 mJ ; (10)Channel temperature Tch: 150 ℃; (11)Storage temperature range Tstg: -55 to 150 ℃.

Features

2SK2611 features: (1)Low drain-source ON resistance: RDS (ON) = 1.1 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 7.0 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).