SI5904DC-T1-E3

Dual N-Channel, 2.5 V (G-S) MOSFET, 20V, 3.1A, 2.1 to 1.1W, ± 12V

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PartNumber:: SI5904DC-T1-E3

Brand:: Vishay Siliconix - Vishay | Pack: DIP | D/C: 10+

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Products Upload time: 2011-12-21

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Product Summary

The SI5904DC-T1-E3 is a dual N-Channel 2.5 V (G-S) MOSFET.

Parametrics

SI5904DC-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20V; (2)Gate-Source Voltage VGS: ± 12V; (3)Continuous Drain Current (TJ = 150 ℃): ±4.2 to ± 3.1A; (4)Pulsed Drain Current IDM: ± 10A; (5)Continuous Source Current (Diode Conduction) IS: 1.8 to 0.9A; (6)Maximum Power Dissipation, TA = 25 ℃: 2.1 to 1.1W; (7)Operating Junction and Storage Temperature Range: - 55 to 150℃.

Features

SI5904DC-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET: 2.5 V Rated; (3)Compliant to RoHS Directive 2002/95/EC.