IRF3415STRRPBF

HEXFET power MOSFET, 150V, 43A, D2PAK, 0.042Ω, Advanced process technology

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PartNumber:: IRF3415STRRPBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 10+

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Products Upload time: 2011-12-27

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Part Number:IRF3415STRRPBF
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Product Summary

The IRF3415STRRPBF is a HEXFET power MOSFET. It uses advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF3415STRRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF3415STRRPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRF3415STRRPBF absolute maximum ratings: (1)ID @ Tc=25℃ Continuous drain current, VGS @ 10V: 43A; (2)ID @ Tc=100℃ Continuous drain current, VGS @ 10V: 30A; (3)IDM Pulsed drain current: 150A; (4)PD @ TA=25℃ Power dissipation: 3.8W; (5)PD @ TC=25℃ Power dissipation: 200W; (6)Linear derating factor: 1.3W/℃; (7)VGS Gate-to-source voltage: ±20V; (8)EAS Single pulse avalanche energy: 590mJ; (9)IAR Avalanche current: 22A; (10)EAR Repetitive avalanche energy: 20mJ; (11)dv/dt Peak diode recovery dv/dt: 5.0V/ns; (12)TJ TSTG operating junction and Storage temperature range: -55 to +175℃; (13)Soldering temperature, for 10 seconds: 300(1.6mm from case).

Features

IRF3415STRRPBF features: (1)Advanced process technology; (2)Surface mount; (3)175℃ operating temperature; (4)Fast switcing; (5)Fully avalanche rated; (6)Lead-free.