Product Summary
The 80EPS12 is an input rectifier diode. It has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150℃ junction temperature. Typical applications of the 80EPS12 are in input rectification and these products are designed to be used with International Rectifier Switches and Output Rectifiers which are available in identical package outlines.
Parametrics
80EPS12 absolute maximum ratings: (1)IF(AV) Max. Average Forward Current 80 A; (2)IFSM Max. Peak One Cycle Non-Repetitive: 1450 A; SurgeCurrent: 1500 A ; (3)I2t Max. I2t for fusing: 10500 A2s; (4)I2√t Max. I2√t for fusing: 105000 A2√s.
Features
80EPS12 electrical specifications: (1)VFM Max. Forward Voltage Drop: 1.17 V; (2)rt Forward slope resistance: 3.17 mΩ; (3)VF(TO) Threshold voltage: 0.73 V; (4)IRM Max. Reverse Leakage Current: 0.1 mA at TJ = 25 ℃; 1.0 mA at TJ = 150 ℃.
Diagrams
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![]() 80EPS12 |
![]() Vishay Semiconductors |
![]() Rectifiers 1200 Volt 1450 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() 80EPS12PBF |
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![]() DIODE 1200V 80A TO247AC |
![]() Data Sheet |
![]() Negotiable |
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