Product Summary
The PRF137 is a silicon VDMOS and LDMOS transistor designed specifically for broadband RF applications. PRF137 is suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime.
Parametrics
PRF137 absolute maximum ratings: (1)Total Device Dissipation: 80W; (2)Junction to Case Thermal Resistance: 1.95℃/W; (3)Maximum Junction Temperature: 200℃; (4)Storage Temperature: -65℃ to 150℃; (5)DC Drain Current: 4.0A; (6)Drain to Gate Voltage: 70V; (7)Drain to Source Voltage: 70V; (8)Gate to Source Voltage: 30V.
Features
PRF137 features: (1)Drain Breakdown Voltage: 65V; (2)Zero Bias Drain Current: 2.0mA; (3)Gate Leakage Current: 1μA; (4)Gate Bias for Drain Current: 1 to 7V; (5)Saturation Resistance: 0.70Ohm; (6)Saturation Current: 11.00Amp.
Diagrams
PRF15/18 |
Other |
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Negotiable |
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PRF18AR471QB1RB |
Murata |
Thermistors - PTC 0603 470ohm +/-50% 32volt |
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Negotiable |
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PRF18AR471QB2RB |
Murata |
Thermistors - PTC 470 OHM 32V |
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PRF18AR471QB5RB |
Murata |
Thermistors - PTC 470 Ohm 50% 32volts |
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PRF18AR471QS2RB |
Murata |
Thermistors - PTC 470 OHM 32V |
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PRF18AS471QB1RB |
Murata |
Thermistors - PTC 0603 470ohm +/-50% 32volt |
Data Sheet |
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