Product Summary

The PRF137 is a silicon VDMOS and LDMOS transistor designed specifically for broadband RF applications. PRF137 is suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime.

Parametrics

PRF137 absolute maximum ratings: (1)Total Device Dissipation: 80W; (2)Junction to Case Thermal Resistance: 1.95℃/W; (3)Maximum Junction Temperature: 200℃; (4)Storage Temperature: -65℃ to 150℃; (5)DC Drain Current: 4.0A; (6)Drain to Gate Voltage: 70V; (7)Drain to Source Voltage: 70V; (8)Gate to Source Voltage: 30V.

Features

PRF137 features: (1)Drain Breakdown Voltage: 65V; (2)Zero Bias Drain Current: 2.0mA; (3)Gate Leakage Current: 1μA; (4)Gate Bias for Drain Current: 1 to 7V; (5)Saturation Resistance: 0.70Ohm; (6)Saturation Current: 11.00Amp.

Diagrams

PRF137 diagram

PRF15/18
PRF15/18
Other

Data Sheet
Negotiable 
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PRF18AR471QB1RB
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Data Sheet
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PRF18AR471QB2RB
PRF18AR471QB2RB
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Data Sheet
0-1: $0.50
1-50: $0.32
50-100: $0.26
100-500: $0.19
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PRF18AR471QS2RB
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Data Sheet
0-2000: $0.14
2000-4000: $0.14
4000-5000: $0.13
5000-25000: $0.12
PRF18AS471QB2RB
PRF18AS471QB2RB
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Thermistors - PTC 470 OHM 32V
Data Sheet
0-1: $0.50
1-50: $0.33
50-100: $0.27
100-500: $0.19
PRF18AS471QB5RB
PRF18AS471QB5RB
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Thermistors - PTC 470 Ohm 50% 32volts
Data Sheet
0-1: $0.49
1-50: $0.32
50-100: $0.26
100-500: $0.18