Product Summary
The PRF137 is a silicon VDMOS and LDMOS transistor designed specifically for broadband RF applications. PRF137 is suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime.
Parametrics
PRF137 absolute maximum ratings: (1)Total Device Dissipation: 80W; (2)Junction to Case Thermal Resistance: 1.95℃/W; (3)Maximum Junction Temperature: 200℃; (4)Storage Temperature: -65℃ to 150℃; (5)DC Drain Current: 4.0A; (6)Drain to Gate Voltage: 70V; (7)Drain to Source Voltage: 70V; (8)Gate to Source Voltage: 30V.
Features
PRF137 features: (1)Drain Breakdown Voltage: 65V; (2)Zero Bias Drain Current: 2.0mA; (3)Gate Leakage Current: 1μA; (4)Gate Bias for Drain Current: 1 to 7V; (5)Saturation Resistance: 0.70Ohm; (6)Saturation Current: 11.00Amp.
Diagrams
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![]() PRF18BD471RB1RB |
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![]() THERMISTOR 470 OHM PTC 0603 SMD |
![]() Data Sheet |
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![]() PRF18BA471QS5RB |
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![]() THERMISTOR PTC 470 OHM SMD |
![]() Data Sheet |
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![]() PRF18BE471RB1RB |
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![]() THERMISTOR 470 OHM PTC 0603 SMD |
![]() Data Sheet |
![]() Negotiable |
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![]() PRF18BC471RB1RB |
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![]() THERMISTOR 470 OHM PTC 0603 SMD |
![]() Data Sheet |
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![]() PRF18BB471RB1RB |
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![]() THERMISTOR 470 OHM PTC 0603 SMD |
![]() Data Sheet |
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![]() PRF15/18 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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