(China (Mainland))
Product Summary
The 2SC3583-T1B is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3583-T1B features excellent power gain with very low-noise figures. The 2SC3583-T1B employs direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values.
Parametrics
2SC3583-T1B absolute maximum ratings: (1)Collector to Base Voltage:20 V; (2)Collector to Emitter Voltage:10 V; (3)Emitter to Base Voltage:1.5 V; (4)Collector Current:35 mA; (5)Total Power Dissipation:200 mW; (6)Junction Temperature:150℃; (7)Storage Temperature:-65 to +150℃.
Features
2SC3583-T1B features: (1)NF 1.8 dB TYP. @f = 2.0 GHz; (2)Ga 9 dB TYP. @f = 2.0 GHz.
Diagrams
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